potential drop
英 [pəˈtenʃl drɒp]
美 [pəˈtenʃl drɑːp]
网络 電位降; 电位降; 电势降; 位降; 电压降
英英释义
noun
- the difference in electrical charge between two points in a circuit expressed in volts
双语例句
- Detection of Notch Crack Initiation and Propagation by DC Potential Drop Method
缺口裂纹起裂和扩展检测的直流电位法 - A Consideration of Applications of Potential Drop Method and Its Theoretical Calibration During Slow Crack Growth
关于电位法在缓慢裂纹增长过程中的应用及理论标定 - An advantage of this technology is that the SECM measurements are carried out under steady-state conditions, so that the complication caused by ohmic potential drop and charging current can be overcome, therefore, the reliability of the data was strengthened.
SECM的优势是在稳态条件下测量,可以克服双电层电流和电势降,从而提高测定数据的准确性和可靠性。 - The potential political problems from a 30 per cent drop in the market have been amplified by the scale of the current boom.
股市下跌30%可能带来的政治问题,已被目前繁荣的规模放大。 - Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed.
在该模型的基础上,讨论了势垒、阳极结的电势降落和电流的放大因子等电参数的变化。 - The development of the surface crack in the fatigue failure of a large-scale tubular K-joint specimen has been measured using alternating current potential drop ( ACPD) technique.
用交流电势能落差法(ACPD)测量了一个大型K节点在疲劳破坏过程中表面裂纹增长和破坏过程。 - An Experimental Study on Low Temperature Fatigue Crack Initiation of Metals from Notches by a Microcomputer Aided Potential Drop Measurement System
金属材料低温疲劳裂纹起始寿命的微机辅助电位法测试 - The equation shows that the potential depends on the chemical potential gradient of the active ions in the occluded pitting and partial potential drop corresponding to the same ions.
此式表明,蚀坑内的电压取决于蚀坑内各类活性腐蚀因子的化学势梯度和相应粒子的电压降。 - To compensate for the potential drop caused by charge leakage, the charge pump affords electric charge for the bootstrap capacitor. Use tools to simulate top circuit to make sure of the effectiveness of the function.
电荷泵为自举电容提供电荷补偿,弥补电荷泄漏引起的电位下降。 - Based on this, and taking the potential drop within the n-region into account, the barrier distribution of a p+-n& n structure used in commercial light emitting diodes has been calculated, which prepared a necessary condition for optimizing the structural parameters.
在此基础上,计入n~-区内的电位降,计算了商用发光二极管p~+-n~--n结构的势垒分布,为整体结构的参数优化准备了必要的条件。
